DIODES-Single, Pre-Biased Bipolar Transistors-DDTC123EUA-7-F

Description

/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;200mW/Operating Temperature;-55℃~+150℃/DC Current Gain;20


20 100mA 200mW 50V SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS

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/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;200mW/Operating Temperature;-55℃~+150℃/DC Current Gain;2020 100mA 200mW 50V SOT-323-3 Single, Pre-Biased Bipolar... Read more

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    Description

    /Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;200mW/Operating Temperature;-55℃~+150℃/DC Current Gain;20


    20 100mA 200mW 50V SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS

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