DIODES-Single, Pre-Biased Bipolar Transistors-DRDNB16W-7

Description

Number;1 NPN (Pre-Biased)/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);600mA/Pd - Power Dissipation;200mW/type;NPN/Transition frequency(fT);200MHz/Operating Temperature;-55℃~+150℃/Output Voltage(VO(on));300mV/Input Resistor;1kΩ/Vce Saturation(VCE(sat));300mV/DC Current Gain;56


Pre-Biased Bipolar Transistor (BJT) 18V 600mA 200mW Surface Mount SOT-363

Product form

Number;1 NPN (Pre-Biased)/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);600mA/Pd - Power Dissipation;200mW/type;NPN/Transition frequency(fT);200MHz/Operating Temperature;-55℃~+150℃/Output Voltage(VO(on));300mV/Input Resistor;1kΩ/Vce Saturation(VCE(sat));300mV/DC Current Gain;56Pre-Biased Bipolar... Read more

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    Description

    Number;1 NPN (Pre-Biased)/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);600mA/Pd - Power Dissipation;200mW/type;NPN/Transition frequency(fT);200MHz/Operating Temperature;-55℃~+150℃/Output Voltage(VO(on));300mV/Input Resistor;1kΩ/Vce Saturation(VCE(sat));300mV/DC Current Gain;56


    Pre-Biased Bipolar Transistor (BJT) 18V 600mA 200mW Surface Mount SOT-363

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