DOINGTER-Single FETs, MOSFETs-DD004PG

Description

Drain to Source Voltage;40V/Gate Charge(Qg);140nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;114W/RDS(on);3.2mΩ@10V/Operating Temperature -;-50℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);626pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;7.1nF/Output Capacitance(Coss);807pF


40V 3.2mΩ@10V 1 P-Channel 114W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);140nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;114W/RDS(on);3.2mΩ@10V/Operating Temperature -;-50℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);626pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);140nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;114W/RDS(on);3.2mΩ@10V/Operating Temperature -;-50℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);626pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;7.1nF/Output Capacitance(Coss);807pF


    40V 3.2mΩ@10V 1 P-Channel 114W TO-252 Single FETs, MOSFETs RoHS

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