DOINGTER-Single FETs, MOSFETs-DD016PG

Description

Drain to Source Voltage;40V/Gate Charge(Qg);45nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;30W/RDS(on);11mΩ@10V/Operating Temperature -;-50℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;2.05nF/Output Capacitance(Coss);260pF


40V 11mΩ@10V 1 P-Channel 30W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);45nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;30W/RDS(on);11mΩ@10V/Operating Temperature -;-50℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);45nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;30W/RDS(on);11mΩ@10V/Operating Temperature -;-50℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;2.05nF/Output Capacitance(Coss);260pF


    40V 11mΩ@10V 1 P-Channel 30W TO-252 Single FETs, MOSFETs RoHS

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