DOINGTER-Single FETs, MOSFETs-DO3N10SA

Description

Drain to Source Voltage;100V/Gate Charge(Qg);5.2nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);286mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;320pF


N-Channel 100V 3A 2.5W Surface Mount SOT-23-3

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);5.2nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);286mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);5.2nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);286mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;320pF


    N-Channel 100V 3A 2.5W Surface Mount SOT-23-3

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