DOINGTER-Single FETs, MOSFETs-DOD4286

Description

Drain to Source Voltage;100V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;46W/RDS(on);75mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;1.083nF/Output Capacitance(Coss);51pF


N-Channel 100V 15A 46W Surface Mount TO-252

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;46W/RDS(on);75mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;46W/RDS(on);75mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;1.083nF/Output Capacitance(Coss);51pF


    N-Channel 100V 15A 46W Surface Mount TO-252

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