DOWO-Single FETs, MOSFETs-SI2301

Description

Drain to Source Voltage;20V/Gate Charge(Qg);3.2nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;700mW/RDS(on);110mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);2.8A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;325pF


20V 2.8A 0.7W Surface Mount SOT-23

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);3.2nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;700mW/RDS(on);110mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);2.8A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);3.2nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;700mW/RDS(on);110mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);2.8A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;325pF


    20V 2.8A 0.7W Surface Mount SOT-23

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