EPC-Single FETs, MOSFETs-EPC2012C

Description

Drain to Source Voltage;200V/Gate Charge(Qg);1nC/Number;1 N-channel/Type;N-Channel/RDS(on);70mΩ/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.4pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;100pF/Output Capacitance(Coss);64pF


200V 70mΩ 1 N-channel Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);1nC/Number;1 N-channel/Type;N-Channel/RDS(on);70mΩ/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.4pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;100pF/Output Capacitance(Coss);64pF200V 70mΩ... Read more

$11.40 Excl. VAT

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);1nC/Number;1 N-channel/Type;N-Channel/RDS(on);70mΩ/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.4pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;100pF/Output Capacitance(Coss);64pF


    200V 70mΩ 1 N-channel Single FETs, MOSFETs RoHS

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