EPC-Single FETs, MOSFETs-EPC2019

Description

Drain to Source Voltage;200V/Gate Charge(Qg);1.8nC/Number;1 N-channel/Type;N-Channel/RDS(on);36mΩ/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.7pF/Current - Continuous Drain(Id);8.5A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;200pF/Output Capacitance(Coss);110pF


200V 36mΩ 1 N-channel SMD Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);1.8nC/Number;1 N-channel/Type;N-Channel/RDS(on);36mΩ/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.7pF/Current - Continuous Drain(Id);8.5A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;200pF/Output Capacitance(Coss);110pF200V 36mΩ... Read more

$17.73 Excl. VAT

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);1.8nC/Number;1 N-channel/Type;N-Channel/RDS(on);36mΩ/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.7pF/Current - Continuous Drain(Id);8.5A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;200pF/Output Capacitance(Coss);110pF


    200V 36mΩ 1 N-channel SMD Single FETs, MOSFETs RoHS

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