ETERNAL-Single FETs, MOSFETs-ET4435

Description

Drain to Source Voltage;30V/Gate Charge(Qg);30nC/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;3.1W/RDS(on);16mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);300pF/Current - Continuous Drain(Id);9.1A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.6nF/Output Capacitance(Coss);350pF


P-Channel 30V 9.1A 3.1W Surface Mount SOP-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);30nC/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;3.1W/RDS(on);16mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);300pF/Current - Continuous Drain(Id);9.1A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);30nC/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;3.1W/RDS(on);16mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);300pF/Current - Continuous Drain(Id);9.1A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.6nF/Output Capacitance(Coss);350pF


    P-Channel 30V 9.1A 3.1W Surface Mount SOP-8

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