Existar-Single FETs, MOSFETs-E100N2P3OH1

Description

Drain to Source Voltage;100V/Gate Charge(Qg);203nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;536W/RDS(on);2.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);325A/Gate Threshold Voltage (Vgs(th));3.2V/Ciss-Input Capacitance;12.56nF/Output Capacitance(Coss);1.81nF


N-Channel 100V 325A 536W Surface Mount TOLL-8

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);203nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;536W/RDS(on);2.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);325A/Gate Threshold Voltage (Vgs(th));3.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);203nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;536W/RDS(on);2.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);325A/Gate Threshold Voltage (Vgs(th));3.2V/Ciss-Input Capacitance;12.56nF/Output Capacitance(Coss);1.81nF


    N-Channel 100V 325A 536W Surface Mount TOLL-8

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