FUXINSEMI-Single FETs, MOSFETs-FS2310

Description

Drain to Source Voltage;60V/Gate Charge(Qg);5.1nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.2W/RDS(on);100mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;330pF/Output Capacitance(Coss);90pF


N-Channel 60V 3A 1.2W Surface Mount SOT-23

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);5.1nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.2W/RDS(on);100mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);5.1nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.2W/RDS(on);100mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;330pF/Output Capacitance(Coss);90pF


    N-Channel 60V 3A 1.2W Surface Mount SOT-23

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