FUXINSEMI-Single FETs, MOSFETs-SI01P10

Description

Drain to Source Voltage;100V/Gate Charge(Qg);4nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;500mW/RDS(on);650mΩ@10V/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));2.5V


P-Channel 100V 1A 0.5W Surface Mount SOT-23

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);4nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;500mW/RDS(on);650mΩ@10V/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));2.5VP-Channel 100V 1A 0.5W Surface Mount... Read more

$0.87 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);4nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;500mW/RDS(on);650mΩ@10V/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));2.5V


    P-Channel 100V 1A 0.5W Surface Mount SOT-23

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