FUXINSEMI-Single FETs, MOSFETs-SI2301CDS

Description

Drain to Source Voltage;20V/Gate Charge(Qg);6.6nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;400mW/RDS(on);142mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;500pF


P-Channel 20V 3A 0.4W Surface Mount SOT-23

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);6.6nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;400mW/RDS(on);142mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);6.6nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;400mW/RDS(on);142mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;500pF


    P-Channel 20V 3A 0.4W Surface Mount SOT-23

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