FUXINSEMI-Single FETs, MOSFETs-Si2318CDS

Description

Drain to Source Voltage;40V/Gate Charge(Qg);5nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.04W/RDS(on);32mΩ@10V;50mΩ@4.5V/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;560pF/Output Capacitance(Coss);70pF


40V 1 N-channel 1.04W SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);5nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.04W/RDS(on);32mΩ@10V;50mΩ@4.5V/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;560pF/Output Capacitance(Coss);70pF40V 1 N-channel 1.04W... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);5nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.04W/RDS(on);32mΩ@10V;50mΩ@4.5V/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;560pF/Output Capacitance(Coss);70pF


    40V 1 N-channel 1.04W SOT-23 Single FETs, MOSFETs RoHS

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