GL-Single FETs, MOSFETs-GL4N65FA9

Description

Drain to Source Voltage;650V/Gate Charge(Qg);14.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;30W/RDS(on);2.4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.5pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;544pF/Output Capacitance(Coss);55pF


N-Channel 650V 4A 30W Through Hole TO-220F-3

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);14.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;30W/RDS(on);2.4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.5pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);14.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;30W/RDS(on);2.4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.5pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;544pF/Output Capacitance(Coss);55pF


    N-Channel 650V 4A 30W Through Hole TO-220F-3

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