GOFORD-Single FETs, MOSFETs-11N10

Description

Drain to Source Voltage;100V/Gate Charge(Qg);163nC@10V/Number;1 N-channel/Pd - Power Dissipation;220W/RDS(on);9mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);330pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;6.5nF/Output Capacitance(Coss);380pF


100V 110A 220W Through Hole TO-220

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);163nC@10V/Number;1 N-channel/Pd - Power Dissipation;220W/RDS(on);9mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);330pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;6.5nF/Output Capacitance(Coss);380pF100V... Read more

$4.98 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);163nC@10V/Number;1 N-channel/Pd - Power Dissipation;220W/RDS(on);9mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);330pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;6.5nF/Output Capacitance(Coss);380pF


    100V 110A 220W Through Hole TO-220

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