GOFORD-Single FETs, MOSFETs-18N20F

Description

Drain to Source Voltage;200V/Gate Charge(Qg);17.7nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);130mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.81pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;836pF/Output Capacitance(Coss);73pF


N-Channel 200V 18A 110W Through Hole TO-220F

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);17.7nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);130mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.81pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);17.7nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);130mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.81pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;836pF/Output Capacitance(Coss);73pF


    N-Channel 200V 18A 110W Through Hole TO-220F

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