GOFORD-Single FETs, MOSFETs-25P06

Description

Drain to Source Voltage;60V/Gate Charge(Qg);45nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;66W/RDS(on);40mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);111pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.543nF


P-Channel 60V 25A 66W Surface Mount TO-252

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);45nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;66W/RDS(on);40mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);111pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);45nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;66W/RDS(on);40mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);111pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.543nF


    P-Channel 60V 25A 66W Surface Mount TO-252

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