GOFORD-Single FETs, MOSFETs-9N90

Description

Drain to Source Voltage;900V/Gate Charge(Qg);160nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);1.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.6pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;7.668nF/Output Capacitance(Coss);157pF


900V 9A 50W Through Hole TO-3P

Product form

Drain to Source Voltage;900V/Gate Charge(Qg);160nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);1.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.6pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input... Read more

$3.51 Excl. VAT

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    Description

    Drain to Source Voltage;900V/Gate Charge(Qg);160nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);1.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.6pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;7.668nF/Output Capacitance(Coss);157pF


    900V 9A 50W Through Hole TO-3P

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