GOFORD-Single FETs, MOSFETs-G030P04T

Description

Drain to Source Voltage;40V/Gate Charge(Qg);206nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;183W/RDS(on);2.6mΩ@10V;3.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);185A/Gate Threshold Voltage (Vgs(th));1.6V


P-Channel 40V 185A 183W Through Hole TO-220

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);206nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;183W/RDS(on);2.6mΩ@10V;3.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);185A/Gate Threshold Voltage (Vgs(th));1.6VP-Channel 40V 185A 183W... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);206nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;183W/RDS(on);2.6mΩ@10V;3.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);185A/Gate Threshold Voltage (Vgs(th));1.6V


    P-Channel 40V 185A 183W Through Hole TO-220

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