GOFORD-Single FETs, MOSFETs-G040P04M

Description

Drain to Source Voltage;40V/Gate Charge(Qg);206nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;312W/RDS(on);2.9mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);1.391nF/Current - Continuous Drain(Id);222A/Gate Threshold Voltage (Vgs(th));1.6V


P-Channel 40V 222A 312W Surface Mount TO-263

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);206nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;312W/RDS(on);2.9mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);1.391nF/Current - Continuous Drain(Id);222A/Gate Threshold Voltage (Vgs(th));1.6VP-Channel 40V 222A... Read more

$1.98 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);206nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;312W/RDS(on);2.9mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);1.391nF/Current - Continuous Drain(Id);222A/Gate Threshold Voltage (Vgs(th));1.6V


    P-Channel 40V 222A 312W Surface Mount TO-263

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