GOFORD-Single FETs, MOSFETs-G050P03D5

Description

Drain to Source Voltage;30V/Gate Charge(Qg);111nC@10V/Number;1 P-Channel/Pd - Power Dissipation;100W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);968pF/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;7.67nF


P-Channel 30V 85A 100W Surface Mount DFN5x6-8L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);111nC@10V/Number;1 P-Channel/Pd - Power Dissipation;100W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);968pF/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);111nC@10V/Number;1 P-Channel/Pd - Power Dissipation;100W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);968pF/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;7.67nF


    P-Channel 30V 85A 100W Surface Mount DFN5x6-8L

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