GOFORD-Single FETs, MOSFETs-G1006R

Description

Drain to Source Voltage;100V/Gate Charge(Qg);15.5nC@30V/Number;1 N-channel/Pd - Power Dissipation;3W/RDS(on);122mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;690pF


100V 3W Through Hole TO-92

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);15.5nC@30V/Number;1 N-channel/Pd - Power Dissipation;3W/RDS(on);122mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

$2.10 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);15.5nC@30V/Number;1 N-channel/Pd - Power Dissipation;3W/RDS(on);122mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;690pF


    100V 3W Through Hole TO-92

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account