GOFORD-Single FETs, MOSFETs-G110N06K

Description

Drain to Source Voltage;60V/Gate Charge(Qg);113nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;160W/RDS(on);5.5mΩ/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5.538nF


N-Channel 60V 110A 160W Surface Mount TO-252

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);113nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;160W/RDS(on);5.5mΩ/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5.538nFN-Channel 60V 110A... Read more

$1.92 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);113nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;160W/RDS(on);5.5mΩ/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5.538nF


    N-Channel 60V 110A 160W Surface Mount TO-252

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