GOFORD-Single FETs, MOSFETs-G12P06K

Description

Drain to Source Voltage;60V/Gate Charge(Qg);23nC@30V/Number;1 P-Channel/Pd - Power Dissipation;27W/RDS(on);120mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);58pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.108nF


60V 12A 27W Surface Mount TO-252

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);23nC@30V/Number;1 P-Channel/Pd - Power Dissipation;27W/RDS(on);120mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);58pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);23nC@30V/Number;1 P-Channel/Pd - Power Dissipation;27W/RDS(on);120mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);58pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.108nF


    60V 12A 27W Surface Mount TO-252

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