GOFORD-Single FETs, MOSFETs-G170P02D2

Description

Drain to Source Voltage;20V/Gate Charge(Qg);30nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;18W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);276pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input Capacitance;2.179nF


P-Channel 20V 16A 18W Surface Mount DFN2x2-6L

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);30nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;18W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);276pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);30nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;18W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);276pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input Capacitance;2.179nF


    P-Channel 20V 16A 18W Surface Mount DFN2x2-6L

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