GOFORD-Single FETs, MOSFETs-G1N60B

Description

Drain to Source Voltage;600V/Gate Charge(Qg);5nC@10V/Type;N-Channel/Pd - Power Dissipation;17W/RDS(on);10Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.2pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));4.2V/Ciss-Input Capacitance;135pF/Output Capacitance(Coss);13pF


N-Channel 600V 1A 17W Through Hole TO-251

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);5nC@10V/Type;N-Channel/Pd - Power Dissipation;17W/RDS(on);10Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.2pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));4.2V/Ciss-Input Capacitance;135pF/Output... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);5nC@10V/Type;N-Channel/Pd - Power Dissipation;17W/RDS(on);10Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.2pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));4.2V/Ciss-Input Capacitance;135pF/Output Capacitance(Coss);13pF


    N-Channel 600V 1A 17W Through Hole TO-251

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