GOFORD-Single FETs, MOSFETs-G2012
- GOFORD
Drain to Source Voltage;20V/Gate Charge(Qg);29nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.5W/RDS(on);18mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);235pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more
$1.35 Excl. VAT
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