GOFORD-Single FETs, MOSFETs-G58N06F

Description

Drain to Source Voltage;60V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;44W/RDS(on);15mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.4V


N-Channel 60V 35A 44W Through Hole TO-220F

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;44W/RDS(on);15mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.4VN-Channel 60V 35A 44W... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;44W/RDS(on);15mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.4V


    N-Channel 60V 35A 44W Through Hole TO-220F

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