GOFORD-Single FETs, MOSFETs-G58N06K

Description

Drain to Source Voltage;60V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Pd - Power Dissipation;71W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);139pF/Current - Continuous Drain(Id);58A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.841nF


N-Channel 60V 58A 71W Surface Mount TO-252

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Pd - Power Dissipation;71W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);139pF/Current - Continuous Drain(Id);58A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Pd - Power Dissipation;71W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);139pF/Current - Continuous Drain(Id);58A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.841nF


    N-Channel 60V 58A 71W Surface Mount TO-252

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