GOFORD-Single FETs, MOSFETs-G65P06K

Description

Drain to Source Voltage;60V/Gate Charge(Qg);75nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;125W/RDS(on);18mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);350pF/Current - Continuous Drain(Id);65A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;6.557nF


P-Channel 60V 65A 125W Surface Mount TO-252

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);75nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;125W/RDS(on);18mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);350pF/Current - Continuous Drain(Id);65A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);75nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;125W/RDS(on);18mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);350pF/Current - Continuous Drain(Id);65A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;6.557nF


    P-Channel 60V 65A 125W Surface Mount TO-252

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