GOFORD-Single FETs, MOSFETs-G6N02L

Description

Drain to Source Voltage;20V/Gate Charge(Qg);12.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.8W/RDS(on);14.1mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;1.14nF/Output Capacitance(Coss);165pF


N-Channel 20V 9A 1.8W Surface Mount SOT-23-3L

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);12.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.8W/RDS(on);14.1mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);12.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.8W/RDS(on);14.1mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;1.14nF/Output Capacitance(Coss);165pF


    N-Channel 20V 9A 1.8W Surface Mount SOT-23-3L

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