GOFORD-Single FETs, MOSFETs-G6N02L-BQ

Description

Drain to Source Voltage;20V/Gate Charge(Qg);12.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1W/RDS(on);14.1mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);152pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;1.151nF/Output Capacitance(Coss);160pF


N-Channel 20V 9A 1W Surface Mount SOT-23-3

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);12.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1W/RDS(on);14.1mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);152pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);12.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1W/RDS(on);14.1mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);152pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;1.151nF/Output Capacitance(Coss);160pF


    N-Channel 20V 9A 1W Surface Mount SOT-23-3

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