GOFORD-Single FETs, MOSFETs-G700P06J

Description

Drain to Source Voltage;60V/Gate Charge(Qg);23nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;50W/RDS(on);60mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.465nF/Output Capacitance(Coss);68pF


P-Channel 60V 23A 50W Through Hole TO-251

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);23nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;50W/RDS(on);60mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);23nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;50W/RDS(on);60mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.465nF/Output Capacitance(Coss);68pF


    P-Channel 60V 23A 50W Through Hole TO-251

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