GOFORD-Single FETs, MOSFETs-G700P06T

Description

Drain to Source Voltage;60V/Gate Charge(Qg);23nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;100W/RDS(on);70mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;1.428nF/Output Capacitance(Coss);64pF


P-Channel 60V 25A 100W Through Hole TO-220

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);23nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;100W/RDS(on);70mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);23nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;100W/RDS(on);70mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;1.428nF/Output Capacitance(Coss);64pF


    P-Channel 60V 25A 100W Through Hole TO-220

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