GOFORD-Single FETs, MOSFETs-G86N06K-BQ

Description

Drain to Source Voltage;60V/Gate Charge(Qg);61nC@10V/Number;1 N-channel/Pd - Power Dissipation;110W/RDS(on);8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.335nF


N-Channel 60V 80A 110W Surface Mount TO-252

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);61nC@10V/Number;1 N-channel/Pd - Power Dissipation;110W/RDS(on);8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$3.36 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);61nC@10V/Number;1 N-channel/Pd - Power Dissipation;110W/RDS(on);8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.335nF


    N-Channel 60V 80A 110W Surface Mount TO-252

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