GOFORD-Single FETs, MOSFETs-G90P04F

Description

Drain to Source Voltage;40V/Gate Charge(Qg);42nC@10V/Number;1 P-Channel/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);605pF/Current - Continuous Drain(Id);68A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;6.371nF


P-Channel 40V 68A Through Hole TO-220F

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);42nC@10V/Number;1 P-Channel/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);605pF/Current - Continuous Drain(Id);68A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;6.371nFP-Channel 40V 68A... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);42nC@10V/Number;1 P-Channel/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);605pF/Current - Continuous Drain(Id);68A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;6.371nF


    P-Channel 40V 68A Through Hole TO-220F

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