GOFORD-Single FETs, MOSFETs-GC085N65QF

Description

Drain to Source Voltage;650V/Gate Charge(Qg);76nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;299W/RDS(on);72mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));4.6V


N-Channel 650V 40A 299W Through Hole TO-247

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);76nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;299W/RDS(on);72mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));4.6VN-Channel 650V 40A 299W... Read more

$7.62 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);76nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;299W/RDS(on);72mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));4.6V


    N-Channel 650V 40A 299W Through Hole TO-247

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