GOFORD-Single FETs, MOSFETs-GC125N65FF

Description

Drain to Source Voltage;650V/Gate Charge(Qg);52nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;27W/RDS(on);103mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.2pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));4.6V/Ciss-Input Capacitance;1.58nF/Output Capacitance(Coss);88pF


N-Channel 650V 25A 27W Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);52nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;27W/RDS(on);103mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.2pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));4.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);52nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;27W/RDS(on);103mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.2pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));4.6V/Ciss-Input Capacitance;1.58nF/Output Capacitance(Coss);88pF


    N-Channel 650V 25A 27W Through Hole TO-220F

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