GOFORD-Single FETs, MOSFETs-GC280N65F
- GOFORD
Drain to Source Voltage;650V/Gate Charge(Qg);27nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96.1W/RDS(on);280mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.4pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input... Read more
$3.33 Excl. VAT
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