GOFORD-Single FETs, MOSFETs-GT013N04Q

Description

Drain to Source Voltage;40V/Gate Charge(Qg);50nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);1.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);195A/Gate Threshold Voltage (Vgs(th));3V


N-Channel 40V 195A 96W Through Hole TO-247

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);50nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);1.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);195A/Gate Threshold Voltage (Vgs(th));3VN-Channel 40V 195A 96W... Read more

$4.44 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);50nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);1.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);195A/Gate Threshold Voltage (Vgs(th));3V


    N-Channel 40V 195A 96W Through Hole TO-247

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