GOFORD-Single FETs, MOSFETs-GT023N10M

Description

Drain to Source Voltage;100V/Gate Charge(Qg);121nC@50V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;250W/RDS(on);2.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);226A/Gate Threshold Voltage (Vgs(th));4.3V


N-Channel 100V 226A 250W Surface Mount TO-263

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);121nC@50V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;250W/RDS(on);2.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);226A/Gate Threshold Voltage (Vgs(th));4.3VN-Channel... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);121nC@50V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;250W/RDS(on);2.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);226A/Gate Threshold Voltage (Vgs(th));4.3V


    N-Channel 100V 226A 250W Surface Mount TO-263

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