GOFORD-Single FETs, MOSFETs-GT042P06T

Description

Drain to Source Voltage;60V/Gate Charge(Qg);305nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;280W/RDS(on);3.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);365pF/Current - Continuous Drain(Id);160A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;9.151nF/Output Capacitance(Coss);1.468nF


P-Channel 60V 160A 280W Through Hole TO-220

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);305nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;280W/RDS(on);3.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);365pF/Current - Continuous Drain(Id);160A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$4.17 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);305nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;280W/RDS(on);3.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);365pF/Current - Continuous Drain(Id);160A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;9.151nF/Output Capacitance(Coss);1.468nF


    P-Channel 60V 160A 280W Through Hole TO-220

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