GOFORD-Single FETs, MOSFETs-GT045N10M
- GOFORD
Drain to Source Voltage;100V/Gate Charge(Qg);101.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;156W/RDS(on);4.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);139A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more
$3.03 Excl. VAT
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