GOFORD-Single FETs, MOSFETs-GT090P08M

Description

Drain to Source Voltage;80V/Gate Charge(Qg);173nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;490W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);435pF/Current - Continuous Drain(Id);178A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;11.17nF/Output Capacitance(Coss);930pF


P-Channel 80V 178A Surface Mount TO-263

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);173nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;490W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);435pF/Current - Continuous Drain(Id);178A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);173nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;490W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);435pF/Current - Continuous Drain(Id);178A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;11.17nF/Output Capacitance(Coss);930pF


    P-Channel 80V 178A Surface Mount TO-263

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