GOFORD-Single FETs, MOSFETs-GT1003A

Description

Drain to Source Voltage;100V/Gate Charge(Qg);4.3nC@50V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.4pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;206pF/Output Capacitance(Coss);76pF


N-Channel 100V 3A 1.6W Surface Mount SOT-23-3L

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);4.3nC@50V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.4pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);4.3nC@50V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.4pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;206pF/Output Capacitance(Coss);76pF


    N-Channel 100V 3A 1.6W Surface Mount SOT-23-3L

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