GOFORD-Single FETs, MOSFETs-GT120N10

Description

Drain to Source Voltage;100V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;220W/RDS(on);4.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;7.5nF/Output Capacitance(Coss);755pF


N-Channel 100V 150A 220W Through Hole TO-220

Product form

Drain to Source Voltage;100V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;220W/RDS(on);4.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;7.5nF/Output Capacitance(Coss);755pFN-Channel 100V 150A... Read more

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    Description

    Drain to Source Voltage;100V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;220W/RDS(on);4.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;7.5nF/Output Capacitance(Coss);755pF


    N-Channel 100V 150A 220W Through Hole TO-220

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