GOFORD-Single FETs, MOSFETs-GT60N12T

Description

Drain to Source Voltage;120V/Gate Charge(Qg);39.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;140W/RDS(on);10.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.3pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.8097nF/Output Capacitance(Coss);356.1pF


N-Channel 120V 6A 140W Through Hole TO-220

Product form

Drain to Source Voltage;120V/Gate Charge(Qg);39.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;140W/RDS(on);10.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.3pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;120V/Gate Charge(Qg);39.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;140W/RDS(on);10.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.3pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.8097nF/Output Capacitance(Coss);356.1pF


    N-Channel 120V 6A 140W Through Hole TO-220

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