GOFORD-Single FETs, MOSFETs-GT880P15TB

Description

Drain to Source Voltage;150V/Gate Charge(Qg);46nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;138W/RDS(on);95mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);26A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;3.35nF/Output Capacitance(Coss);145pF


P-Channel 150V 26A 138W Through Hole TO-220

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);46nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;138W/RDS(on);95mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);26A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);46nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;138W/RDS(on);95mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);26A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;3.35nF/Output Capacitance(Coss);145pF


    P-Channel 150V 26A 138W Through Hole TO-220

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